1. ETD Repository @ TU
  2. School of Engineering
  3. Department of Electronics & Communication Engineering
  4. Theses
Please use this identifier to cite or link to this item: http://192.168.98.239:8080/jspui/handle/1994/1774
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dc.date.accessioned2024-10-29T06:05:46Z-
dc.date.available2024-10-29T06:05:46Z-
dc.date.issued2024-
dc.identifier.urihttp://192.168.98.239:8080/jspui/handle/1994/1774-
dc.description.abstractAvailable.en_US
dc.format.extentxxiv, 142 p.en_US
dc.language.isoenen_US
dc.publisherTezpur Universityen_US
dc.subjectDG-SiCJLTen_US
dc.subjectFETen_US
dc.subjectHigh-temperatureen_US
dc.subjectJLTen_US
dc.subjectJL-TFETen_US
dc.subjectLDMOSen_US
dc.subjectP+-SiCJLTen_US
dc.titleExploring the Reliability of LDMOS and Junctionless FETs in Harsh Environments: High-Temperature and High-Radiation Applicationsen_US
dc.typeThesisen_US
dc.contributor.guideBaruah, Ratul Kumar-
dc.creator.researcherRouth, Sujay-
dc.departmentDepartment of Electronics and Communication Engineeringen_US
Appears in Collections:Theses

Files in This Item:
File Description SizeFormat 
01_title.pdf156.93 kBAdobe PDFView/Open
02_prelim pages.pdf1.8 MBAdobe PDFView/Open
03_content.pdf654.02 kBAdobe PDFView/Open
04_abstract.pdf420.86 kBAdobe PDFView/Open
05_chapter 1.pdf1.36 MBAdobe PDFView/Open
06_chapter 2.pdf1.75 MBAdobe PDFView/Open
07_chapter 3.pdf1.96 MBAdobe PDFView/Open
08_chapter 4.pdf2.4 MBAdobe PDFView/Open
09_chapter 5.pdf743.92 kBAdobe PDFView/Open
10_annexure.pdf54.8 kBAdobe PDFView/Open
80_Recommendation.pdf788.42 kBAdobe PDFView/Open
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