1. ETD Repository @ TU
  2. School of Engineering
  3. Department of Electronics & Communication Engineering
  4. Theses
Please use this identifier to cite or link to this item: http://192.168.98.239:8080/jspui/handle/1994/1871
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dc.date.accessioned2025-09-26T03:52:34Z-
dc.date.available2025-09-26T03:52:34Z-
dc.date.issued2025-
dc.identifier.urihttp://192.168.98.239:8080/jspui/handle/1994/1871-
dc.description.abstractAvailable.en_US
dc.format.extentxxv, 150 p.en_US
dc.language.isoen_USen_US
dc.publisherTezpur Universityen_US
dc.subject2Den_US
dc.subjectBack-gate FETen_US
dc.subjectDopingen_US
dc.subjectLPEen_US
dc.subjectSiO2en_US
dc.subjectTMDen_US
dc.subjectWS2en_US
dc.titleFabrication and Characterization of the 2D Tungsten Disulfide (WS2) Field Effect Transistoren_US
dc.typeThesisen_US
dc.contributor.guideMondal, Biplob-
dc.creator.researcherRoy, Arpita-
dc.departmentDepartment of Electronics and Communication Engineeringen_US
Appears in Collections:Theses

Files in This Item:
File Description SizeFormat 
01_title.pdf224.97 kBAdobe PDFView/Open
02_prelim pages.pdf922.71 kBAdobe PDFView/Open
03_content.pdf148.12 kBAdobe PDFView/Open
04_abstract.pdf206.94 kBAdobe PDFView/Open
05_chapter 1.pdf857.83 kBAdobe PDFView/Open
06_chapter 2.pdf1.05 MBAdobe PDFView/Open
07_chapter 3.pdf1.31 MBAdobe PDFView/Open
08_chapter 4.pdf1.7 MBAdobe PDFView/Open
09_chapter 5.pdf1.87 MBAdobe PDFView/Open
10_chapter 6.pdf160.28 kBAdobe PDFView/Open
11_annexures.pdf171.09 kBAdobe PDFView/Open
80_Recommendation.pdf376 kBAdobe PDFView/Open
90_Plagiarism_Report.pdf307.72 kBAdobe PDFView/Open
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