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Please use this identifier to cite or link to this item: http://192.168.98.239:8080/jspui/handle/1994/1871
Title: Fabrication and Characterization of the 2D Tungsten Disulfide (WS2) Field Effect Transistor
Researcher: Roy, Arpita
Guides: Mondal, Biplob
Keywords: 2D;Back-gate FET;Doping;LPE;SiO2;TMD;WS2
Award Date: 2025
Department: Department of Electronics and Communication Engineering
Publisher: Tezpur University
Upload Date: 26-Sep-2025
Abstract: Available.
Pagination: xxv, 150 p.
URI: http://192.168.98.239:8080/jspui/handle/1994/1871
Appears in Collections:Theses

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01_title.pdf224.97 kBAdobe PDFView/Open
02_prelim pages.pdf922.71 kBAdobe PDFView/Open
03_content.pdf148.12 kBAdobe PDFView/Open
04_abstract.pdf206.94 kBAdobe PDFView/Open
05_chapter 1.pdf857.83 kBAdobe PDFView/Open
06_chapter 2.pdf1.05 MBAdobe PDFView/Open
07_chapter 3.pdf1.31 MBAdobe PDFView/Open
08_chapter 4.pdf1.7 MBAdobe PDFView/Open
09_chapter 5.pdf1.87 MBAdobe PDFView/Open
10_chapter 6.pdf160.28 kBAdobe PDFView/Open
11_annexures.pdf171.09 kBAdobe PDFView/Open
80_Recommendation.pdf376 kBAdobe PDFView/Open
90_Plagiarism_Report.pdf307.72 kBAdobe PDFView/Open
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